| PART |
Description |
Maker |
| HCF4006B HCF4006BC1 HCF4006BEY HCF4006BM1 HCC_HCF4 |
18-STAGE STATIC SHIFT REGISTER
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:50A; On-Resistance, Rds(on):28mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220; Drain-Source Breakdown Voltage:60V 18 -阶段静态移位寄存器
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
ST Microelectronics
|
| KI4980DY |
Drain-Source Voltage Vds 80V Gate-Source Voltage Vgs -20V
|
TY Semiconductor Co., Ltd
|
| SI9926BDY |
Drain-Source Voltage VDS V Gate-Source Voltage VGS -10 V
|
TY Semiconductor Co., Ltd
|
| KHP45N03LT |
Low on-state resistance Fast switching. Drain-Source Voltage VDS 30 V
|
TY Semiconductor Co., Ltd
|
| KI6968BEDQ |
Drain-Source Voltage Vds 20V Gate-Source Voltage Vgs -20V
|
TY Semiconductor Co., Ltd
|
| KXU05N25 |
VDS (V) = 250V RDS(ON) 1 (VGS = 10V) Drain-Source Voltage VDSS 250 V
|
TY Semiconductor Co., Ltd
|
| PST993 PST993C PST993D PST993E PST993F PST993G PST |
MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-2.2A; On-Resistance, Rds(on):0.1ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:SOT-23; Leaded Process Compatible:No
MOSFET, P, SOT-23; Transistor type:MOSFET; Current, Id cont:2.2A; Resistance, Rds on:0.1R; Voltage, Vgs Rds on measurement:4.5V; Case style:SOT-23 (TO-236); Current, Id max:2.2A; Current, Idm pulse:10A; Marking, SMD:L1; Pins, No. RoHS Compliant: Yes
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:2.1A; On-Resistance, Rds(on):0.085ohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:SOT-23; Leaded Process Compatible:No
System Reset
|
MITSUMI ELECTRIC CO LTD
ETC[ETC]
Mitsumi Electronics, Corp.
|
| ST26C32 ST26C32CF16 ST26C32CP16 ST26C32IF16 ST26C3 |
QUAD RS-422, RS-423 CMOS Differential Line Receiver LINE RECEIVER, PDSO16
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:13.4A; On-Resistance, Rds(on):0.0065ohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:8-SOIC; Leaded Process Compatible:No
|
Exar, Corp.
EXAR[Exar Corporation]
|
| PT8A990A PT8A991A |
50V Single N-Channel HEXFET Power MOSFET in a SOT-89 (TO-243AA) package
MOSFET; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:55A; On-Resistance, Rds(on):16.5mohm; Rds(on) Test Voltage, Vgs:10V; Leaded Process Compatible:Yes; Package/Case:D2PAK; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes 9功能遥控器？
|
Mitel Networks, Corp.
|
| ST63P56 ST6356 ST6357 ST6327 ST6326 ST63PXX ST6306 |
MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-3.8A; On-Resistance, Rds(on):0.062ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:8-1206; Leaded Process Compatible:No 8位微控制器HCMOS背驮式电视应
(ST63Pxx) 8 Bit HCMOS Piggyback MCUs for TV Applications
8-BIT HCMOS PIGGYBACK MCUs FOR TV APPLICATIONS
|
STMicroelectronics N.V.
意法半导
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| AP1501A AP1501A-12 AP1501A-12K5 AP1501A-12K5A AP15 |
Adj, 150 Khz, 5 A PWM buck DC/DC converter
150Khz, 5A PWM Buck DC/DC Converter
IR Emitting Diode; Mounting Type:Through Hole; LED Color:Clear; Leaded Process Compatible:Yes; Terminal Type:2 Pin Leaded; Color:Clear; Lens Style:(H x Dia) 8.7 x 5.8 mm; Voltage Rating:5V
IR Emitting Diode; LED Color:Infrared; Mounting Type:Through Hole; Terminal Type:3 Pin Leaded; Color:Infrared; Lens Style:(H x Dia) 12.5 x 10.0 mm; Voltage Rating:5.5V
Leaded Process Compatible: Yes
IR Emitting Diode; Mounting Type:Through Hole; LED Color:Blue Gray; Leaded Process Compatible:Yes; Terminal Type:2 Pin Leaded; Color:Blue Gray; Lens Style:(H x W) 8.7 x 5.8 mm; Voltage Rating:5V
MOSFET, P, SOT-23; Transistor type:MOSFET; Current, Id cont:0.185A; Resistance, Rds on:6R; Voltage, Vgs Rds on measurement:10V; Case style:SOT-23 (TO-236); Current, Id max:0.185A; Current, Idm pulse:.8A; Marking, SMD:6K; Pins, No. RoHS Compliant: Yes
MOSFET, P SOT-23MOSFET, P SOT-23; Transistor type:MOSFET; Transistor polarity:P; Voltage, Vds max:20V; Case style:SOT-23; Current, Id cont:0.58A; Current, Idm pulse:2A; Power, Pd:0.35W; Resistance, Rds on:0.65R; SMD:1; Current, Id
MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-30V; Continuous Drain Current, Id:-385mA; On-Resistance, Rds(on):1.4ohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:TO-236; Drain Source On Resistance @ 10V:1.4ohm
IR Emitting Diode; Mounting Type:Through Hole; LED Color:Infrared; Leaded Process Compatible:Yes; Terminal Type:2 Pin Leaded; Color:Infrared; Lens Style:(H x W) 8.7 x 5.8 mm; Voltage Rating:5V
TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,270MA I(D),TO-226AA RoHS Compliant: Yes
IR EMITTER; Wavelength, typ:950nm; Current, forward If:5mA; Angle, viewing:90(degree); Temperature, operating range:-25(degree C) to (degree C) RoHS Compliant: Yes
MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-580mA; On-Resistance, Rds(on):650mohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:SOT-23
|
ANACHIP[Anachip Corp]
|
| HCS04MS FN3046 HCS04D HCS04DMSR HCS04HMSR HCS04K H |
From old datasheet system
Radiation Hardened Hex Inverter
JFET; Transistor Polarity:N Channel; Breakdown Voltage, V(br)gss:-50V; Zero Gate Voltage Drain Current Min, Idss:0.5mA; Zero Gate Voltage Drain Current Max, Idss:12mA; Gate-Source Cutoff Voltage Max, Vgs(off):-1.5V
|
INTERSIL[Intersil Corporation]
|
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